characteristic test conditions min. typ. max. unit semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 1/94 bv dss i d(on) r ds(on) i dss i gss v gs(th) v dss i d i dm , i lm v gs p d t j , t stg t l 1 3 4 2 r 38.0 (1.496) 38.2 (1.504) 30.1 (1.185) 30.3 (1.193) 14.9 (0.587) 15.1 (0.594) 3.3 (0.129) 3.6 (0.143) 7.8 (0.307) 8.2 (0.322) 31.5 (1.240) 31.7 (1.248) 4.0 (0.157) (2 places) r = 4.0 (0.157) 4.2 (0.165) ) ) 4.1 (0.161 4.3 (0.169 4.8 (0.187) 4.9 (0.193) (4 places) w = h = 8.9 (0.350) 9.6 (0.378) 11.8 (0.463) 12.2 (0.480) hex nut m 4 (4 places) 12.6 (0.496) 12.8 (0.504) 25.2 (0.992) 25.4 (1.000) 0.75 (0.030) 0.85 (0.033) 5.1 (0.201) 5.9 (0.232) 1.95 (0.077) 2.14 (0.084) sotC227 package outline. dimensions in mm (inches) drain C source voltage continuous drain current pulsed drain current 1 and inductive current clamped gate C source voltage total power dissipation @ t case = 25c linear derating factor operating and storage junction temperature range lead temperature : 0.063 from case for 10 sec. v gs = 0v , i d = 250 m a v ds > i d(on) x r ds(on) max v gs = 10v v gs =10v , i d = 0.5 i d [cont.] v ds = v dss v ds = 0.8v dss , t c = 125c v gs = 30v , v ds = 0v v ds = v gs , i d = 2.5ma nCchannel enhancement mode high voltage isolated power mosfets 1000 20.5 82 30 520 4.16 C55 to 150 300 v a a v w w / c c drain C source breakdown voltage on state drain current 2 drain C source on state resistance 2 zero gate voltage drain current (v gs = 0v) gate C source leakage current gate threshold voltage 1000 20.5 0.50 250 1000 100 24 v a w m a na v absolute maximum ratings (t case = 25c unless otherwise stated) 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% static electrical ratings (t case = 25c unless otherwise stated) BFC10 lab seme v dss 1000v i d(cont) 20.5a r ds(on) 0.50 w w * source 2 may be omitted, shorted to source 1 or used for gate drive circuit. 4th generation mosfet terminal 1 source 2* terminal 2 drain terminal 3 gate terminal 4 source 1
BFC10 characteristic test conditions min. typ. max. unit c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f characteristic test conditions min. typ. max. unit 20.5 82 1.8 640 1280 2000 8 16 32 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 1/94 i s i sm v sd t rr q rr v gs = 0v , i s = C i d [cont.] i s = C i d [cont.] dl s / dt = 100a/ m s continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 reverse recovery time reverse recovery charge a v ns m c characteristic min. typ. max. unit 3 5 2500 35 13 l d l s v isolation c isolation torque internal drain inductance (measured from drain terminal to centre of die) internal source inductance (measured from source terminals to source bond pads) rms voltage (50C60 hz sinusoidal waveform from terminals to mounting base for 1 min.) drain-to-mounting base capacitance f = 1mhz maximum torque for device mounting screws and electrical terminations nh v pf inClbs characteristic min. typ. max. unit 0.24 0.05 r q jc r q cs junction to case case to sink (use high efficiency thermal joint compound and planar heat sink surface.) c/w d ynamic chara cteristics source C drain diode ra tings and chara cteristics p a cka ge chara cteristics thermal chara cteristics 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% 3) see milCstdC750 method 3471 input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate C source charge gate C drain (miller) charge turnCon delay time rise time turn-off delay time fall time v gs = 0v v ds = 25v f = 1mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 w pf nc ns 5425 6500 710 995 230 350 235 370 24 36 107 160 15 30 15 30 47 75 15 30 l ab sem e caution electrostatic sensitive devices. anti-static procedures must be followed.
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